The article discusses the significance of understanding the chemical interaction of hydrogen with oxide materials, particularly in Atomic Layer Deposition (ALD) barrier films. ALD is crucial for creating thin films with precise atomic-level precision, but the incorporation of hydrogen impurities, especially in amorphous alumina films, has been shown to have negative effects on mechanical, dielectric, and thermal properties. X-ray photoelectron spectroscopy (XPS) is highlighted as a key analytical tool for indirectly analyzing hydrogen effects through modified Auger parameter analysis. The modified Auger parameter is crucial for determining the chemical state of materials, providing insights into hydrogen's local chemical bonding state in these films. The study aims to extend a model for analyzing hydrogen impurities in amorphous materials like alumina by combining atomistic modeling with Auger parameter shifts, potentially simplifying the analysis of material properties affected by hydrogen incorporation. Ultimately, this research contributes to the development of improved materials for various applications, including energy conversion, electronics, catalysis, and corrosion protection.